An Optimization of Nanostructure Aluminum on Porous Silicon at Different Aluminum Thickness

  • Nurhayati Muhd Ramli University Tun Hussein Onn Malaysia http://orcid.org/0000-0003-0839-246X
  • Mohd Khairul Ahmad UTHM
  • Mohammad Adzlan Danish Adam UTHM
  • Fariza Mohamad UTHM
  • Nafarizal Nayan UTHM
  • Soon Chin Fong UTHM
  • Amira Saryati Ameruddin UTHM
  • Faridah Abu Bakar UTHM
  • Masaru Shimomura Shizuoka University
  • Kenji Murakami Shizuoka University
Keywords: Porous silicon, hydrofluoric acid, aluminum nanostructures, thermal evaporation method, Raman spectroscopy

Abstract

The growth of aluminum nanostructure was conducted on porous silicon substrate by depositing a layer of aluminum via thermal evaporation method. The deposition process of the aluminum nanostructure was under the annealing temperature at 350°C for 1 hour. The weight of aluminum was varied for each sample in order to obtain different thickness of aluminum deposited on the sample. The weight of aluminum used in this experiment were 12mg ,18mg ,50mg and 74mg with the corresponding aluminum thickness deposited of 112nm, 163nm, 205nm and 332nm. Characterization on the morphology of the sample are conducted by using Atomic force microscopy (AFM), Raman spectroscopy and IV measurements. Based on the result obtained, the optimum weight of aluminum was 50mg of aluminum since it is provide the higher conductivity value on the sample.
Published
2018-01-03
How to Cite
Ramli, N. M., Ahmad, M. K., Adam, M. A. D., Mohamad, F., Nayan, N., Chin Fong, S., Ameruddin, A. S., Abu Bakar, F., Shimomura, M., & Murakami, K. (2018). An Optimization of Nanostructure Aluminum on Porous Silicon at Different Aluminum Thickness. International Journal of Integrated Engineering, 9(4). Retrieved from https://publisher.uthm.edu.my/ojs/index.php/ijie/article/view/2084

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