The Effect of Annealing Treatment on n-Cu2O Thin Film Fabrication

Authors

  • Anis zafirah Mohd ismail University Tun Hussein Onn Malaysia,
  • Fariza Mohamad University Tun Hussein Onn Malaysia
  • Nik Hisyamudin Muhd Nor University Tun Hussein Onn Malaysia
  • Masanobu Izaki Toyohashi University of Technology

Keywords:

Electrodeposition, annealing treatment, Cu2O thin film

Abstract

This experiment is about fabrication of homojunction n-type cuprous oxide (Cu2O) thin film by using electrodeposition method. The Cu2O thin films were deposited on fluorine doped tin oxide (FTO) substrates by using copper acetate based solution through potentiostatic electrodeposition method. The n-type Cu2O was fabricated at pH 6.3 with a fixed potential of -0.125V vs. Ag/AgCl and time deposition of 30 minutes. Annealing treatment was introduced to enhance the properties of the thin films.  The quality of Cu2O thin films were studied in varied the annealing duration. Morphological, structural, optical and electrical properties were characterized using X-Ray Diffractometer, Field Emission-Scanning Electron Microscopy, Ultraviolet-visible Spectroscopy and Four Point Probe, respectively.

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Author Biographies

Anis zafirah Mohd ismail, University Tun Hussein Onn Malaysia,

Microelectronic & Nanotechnology - Shamsuddin Research Center

Fariza Mohamad, University Tun Hussein Onn Malaysia

Faculty of Electrical  and Electronics Engineering

Nik Hisyamudin Muhd Nor, University Tun Hussein Onn Malaysia

Faculty of Mechanical & Manufacturing Engineering

Masanobu Izaki, Toyohashi University of Technology

Faculty of Mechanical Engineering

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Published

31-01-2020

How to Cite

Mohd ismail, A. zafirah, Mohamad, F., Muhd Nor, N. H., & Izaki, M. (2020). The Effect of Annealing Treatment on n-Cu2O Thin Film Fabrication . International Journal of Integrated Engineering, 12(1), 102–107. Retrieved from https://publisher.uthm.edu.my/ojs/index.php/ijie/article/view/3803

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