The Effect of Annealing Treatment on n-Cu2O Thin Film Fabrication

  • Anis zafirah Mohd ismail University Tun Hussein Onn Malaysia,
  • Fariza Mohamad University Tun Hussein Onn Malaysia
  • Nik Hisyamudin Muhd Nor University Tun Hussein Onn Malaysia
  • Masanobu Izaki Toyohashi University of Technology
Keywords: Electrodeposition, annealing treatment, Cu2O thin film

Abstract

This experiment is about fabrication of homojunction n-type cuprous oxide (Cu2O) thin film by using electrodeposition method. The Cu2O thin films were deposited on fluorine doped tin oxide (FTO) substrates by using copper acetate based solution through potentiostatic electrodeposition method. The n-type Cu2O was fabricated at pH 6.3 with a fixed potential of -0.125V vs. Ag/AgCl and time deposition of 30 minutes. Annealing treatment was introduced to enhance the properties of the thin films.  The quality of Cu2O thin films were studied in varied the annealing duration. Morphological, structural, optical and electrical properties were characterized using X-Ray Diffractometer, Field Emission-Scanning Electron Microscopy, Ultraviolet-visible Spectroscopy and Four Point Probe, respectively.

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Author Biographies

Anis zafirah Mohd ismail, University Tun Hussein Onn Malaysia,
Microelectronic & Nanotechnology - Shamsuddin Research Center
Fariza Mohamad, University Tun Hussein Onn Malaysia
Faculty of Electrical  and Electronics Engineering
Nik Hisyamudin Muhd Nor, University Tun Hussein Onn Malaysia
Faculty of Mechanical & Manufacturing Engineering
Masanobu Izaki, Toyohashi University of Technology
Faculty of Mechanical Engineering
Published
31-01-2020
How to Cite
Mohd ismail, A. zafirah, Mohamad, F., Muhd Nor, N. H., & Izaki, M. (2020). The Effect of Annealing Treatment on n-Cu2O Thin Film Fabrication . International Journal of Integrated Engineering, 12(1), 102-107. Retrieved from https://publisher.uthm.edu.my/ojs/index.php/ijie/article/view/3803
Section
Articles