Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature

  • Rajab Yahyazadeh
  • Zahra Hashempour Department of Physics, Khoy Branch, Islamic Azad University, Iran
Keywords: Temperature, Hydrostatic pressure, effective mass, AlGaN/GaN HEMTs

Abstract

In this paper, drain-source current, in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects are taken into account. It has been found that the drain-source current decreases with increasing temperature and increases with increasing hydrostatic pressure. The increase in temperature is equivalent to a negative virtual gate and an increase in the hydrostatic pressure equivalent to the positive virtual gate voltage. Moreover, the temperature and hydrostatic pressure effective mass dependence in high electron mobility transistor structures are investigated, and it is observed that the increase of hydrostatic pressure decreases the effective mass and the wave function penetrated to quantum barrier AlGaN. The calculated results are in good agreement with existing experimental data.

Author Biography

Rajab Yahyazadeh

Rajab yahyazadeh, professor assistant, research fields: experimental and theoretical study of crystal growth, theoretical study of optical and electrical properties of bulk and low-dimensional semiconductor (nitride material), modeling of semiconductor devices and modeling of nanoelectronic devices. E-mail: yahyazadehs@gmail.com.

Published
21-06-2020
How to Cite
Yahyazadeh, R., & Hashempour, Z. (2020). Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature. Journal of Science and Technology, 12(1), 15-28. Retrieved from https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/5377
Section
Articles