Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

  • Rajab Yahyazadeh Department of Physics, Khoy Branch, Islamic Azad University, Khoy, P.O.Box: 175-58135, IRAN
  • Zahra Hashempour Department of Physics, Khoy Branch, Islamic Azad University, Khoy, P.O.Box: 175-58135, IRAN
Keywords: PCF scattering, multi sub-band, channel resistance

Abstract

A numerical model for the source-drain channel resistance based high electron mobility transistors has been developed that is capable to predict accurately the effects of polarization Coulomb Field Scattering (PCF), multi sub-band on source-drain channel resistance. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. In addition, to develop the model, accurate two-dimensional electron gas mobility and modified wave function in barrier AlGaN have been used. According to the numerical calculations, the effect of multi sub-band and PCF scattering on the increase of source-drain channel resistance is 35% and 65%, respectively, with the effect of PCF being almost twice as high as multi sub-band. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

Author Biography

Rajab Yahyazadeh, Department of Physics, Khoy Branch, Islamic Azad University, Khoy, P.O.Box: 175-58135, IRAN

Rajab yahyazadeh, professor assistant, research fields: experimental and theoretical study of crystal growth, theoretical study of optical and electrical properties of bulk and low-dimensional semiconductor (nitride material), modeling of semiconductor devices and modeling of nanoelectronic devices. E-mail: yahyazadehs@gmail.com.

Published
2019-06-10
How to Cite
Yahyazadeh, R., & Hashempour , Z. (2019). Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS. Journal of Science and Technology, 11(1), 1-9. Retrieved from https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/3944
Section
Articles