The Effect of Oxygen Gas Flow Rate on TiO2 Thin Film Prepared by Double Zone CVD Technique

Authors

  • Amira Universiti Tun Hussein Onn Malaysia
  • Jais Lias Universiti Tun Hussein Onn Malaysia

Keywords:

Titanium dioxide (TiO2), Titanium butoxide (IV), Chemical reaction on CVD

Abstract

The research was conducted to determine the deposited TiO2 thin film of titanium dioxide on a 210º C and 60º C glass substratum using a double zone Chemical Vapor Deposition (CVD) furnace. Through a different oxygen gas, the flow rate was varied in range of 0.6 ml ~ 1.2 ml. The effect of oxygen gas flow rate thin films was routinely tested at room temperature on titanium dioxide TiO2 and will be annealed at a fixed time, which is 1 hour at 500º C. The crystal structure properties on TiO2 was obtained using X-Ray Diffraction (XRD). In addition, the studies of surface morphology was performed using Atomic Force Microscope (AFM) and Field Effect Scanning Electron Microscopy (FE-SEM). The TiO2 electrical properties were evaluated to obtain its resistivity and conductivity using a four-point probe. The characterization of TiO2 thin film conducted more systematically and discussed in these research studies.

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Published

12-10-2020

How to Cite

Mohd Haron, N. A. ., & Lias, J. (2020). The Effect of Oxygen Gas Flow Rate on TiO2 Thin Film Prepared by Double Zone CVD Technique . Evolution in Electrical and Electronic Engineering, 1(1), 123–129. Retrieved from https://publisher.uthm.edu.my/periodicals/index.php/eeee/article/view/89

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