Study on Optical Properties of Tin Oxide Thin Film at Different Annealing Temperature

Authors

  • Saturi Baco
  • Abdullah Chik
  • Fouziah Md. Yassin

Keywords:

tin oxide, radio frequency sputtering, energy band gap, annealing

Abstract

Tin Oxide (SnO2) thin film is one of the important transparent conducting oxides (TCOs) and applied in various fields such as in solar cells, optoelectronic devices, heat mirror, gas sensors, etc due to its electrical and optical transparency in visible light spectrum. In this paper, we presented the optical properties of tin oxide thin film at four different annealing temperatures (373 K, 437 K, 573 K and 673 K) prepared by radio frequency sputtering technique. The optical characteristic of these films was investigated using the UV-VIS 3101-PC Spectrophotometer. From this study, all samples exhibit high transmittance more than 70% in the visible light spectrum. Sample annealed at 473 K shows the maximum transmittance which is 87%. Refractive index, n were in the range of 2.33 – 2.80 at ï¬ = 550 nm and enhanced with the annealing temperature. However the extinction of coefficient, k was found to be very small. The optical band-edge absorption coefficients were found in the range of 104 – 105cm-1. The energy gap value was decreased with increasing annealing temperature and the type of photon transition was allowed direct transition.

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Author Biographies

  • Saturi Baco
    Physics with Electronic Programme,
    School of Science & Technology, Universiti Malaysia Sabah,
    Jalan UMS, 88400 Kota Kinabalu, Sabah, Malaysia
  • Abdullah Chik
    School of Material Engineering, Universiti Malaysia Perlis, Kampus Kubang Gajah,
    02600 Arau Perlis, Malaysia.
  • Fouziah Md. Yassin
    Physics with Electronic Programme,
    School of Science & Technology, Universiti Malaysia Sabah,
    Jalan UMS, 88400 Kota Kinabalu, Sabah, Malaysia

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How to Cite

Baco, S., Chik, A., & Md. Yassin, F. (2012). Study on Optical Properties of Tin Oxide Thin Film at Different Annealing Temperature. Journal of Science and Technology, 4(1). https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/468