YAHYAZADEH, Rajab; HASHEMPOUR, Zahra. Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs. International Journal of Integrated Engineering, [S. l.], v. 13, n. 5, p. 276–287, 2021. Disponível em: https://publisher.uthm.edu.my/ojs/index.php/ijie/article/view/6713.. Acesso em: 17 aug. 2024.