Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs

Authors

  • Rajab Yahyazadeh Department of Physics, Khoy Branch, Islamic Azad University, Khoy, IRAN http://orcid.org/0000-0001-8684-4754
  • Zahra Hashempour Department of Physics, Khoy Branch, Islamic Azad University, Khoy, IRAN

Keywords:

Gate current, hydrostatic pressure, AlGaN/GaN HEMT

Abstract

In this paper, we present an analytical-Numerical model for reverse gate leakage current in AlGaN/GaN high electron mobility transistors, which investigate the influence of the hydrostatic pressure (HP) on gate-current.  It has been found that the bound charge at the heterointerface has the most impact on the threshold voltage. The increases in hydrostatic pressure cause an increase in threshold voltage. With increasing HP, the Schottky barrier height decreases, AlGaN electric field and reverse gate leakage current are increased. The increase in HP acts as a positive virtual gate. The dependence on the HP of Poole- Frenkel emission (FP) and Fowler-Nordheim (FN) direct tunneling is more than trap-assisted-tunneling (TAT). Increasing the pressure of 2GPa, the intersection point of PF and TAT varies by 1 volt, and the PF range increases compared to TAT. 

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Author Biography

Rajab Yahyazadeh, Department of Physics, Khoy Branch, Islamic Azad University, Khoy, IRAN

Rajab yahyazadeh, professor assistant, research fields: experimental and theoretical study of crystal growth, theoretical study of optical and electrical properties of bulk and low-dimensional semiconductor (nitride material), modeling of semiconductor devices and modeling of nanoelectronic devices. E-mail: yahyazadehs@gmail.com.

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Published

23-11-2021

How to Cite

Yahyazadeh, R., & Hashempour, Z. . (2021). Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs. International Journal of Integrated Engineering, 13(5), 276–287. Retrieved from https://publisher.uthm.edu.my/ojs/index.php/ijie/article/view/6713