Design of Extended Channel Ge-source TFET for Low Power Applications

Authors

  • Fatma Shokry Ain Shams University
  • Ahmed Shaker Ain Shams University
  • Mohamed Elsaid Ain Shams University
  • Mohamed Abouelatta Ain Shams University

Keywords:

TFET, ambipolar current, Band-To-Band Tunneling (BTBT), transconductance, Subthreshold Swing (SS), cut-off frequency

Abstract

In this paper, a novel design of a TFET structure using Ge-source and extending a part of the channel into the source is proposed. The DC performance is analyzed by evaluating the ON current, ION/IOFF ratio and subthreshold swing (SS). Moreover, the high-frequency performance is inspected in terms of transconductance (gm) and unit-gain cutoff frequency (fT). All simulations are performed utilizing 2D SILVACO TCAD. It is demonstrated that the ON current and the cut-off frequency can be simultaneously improved by appropriate design of the proposed structure.

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Published

30-08-2020

Issue

Vol. 12 No. 8 (2020)

Section

Articles

License

Open access licenses

Open Access is by licensing the content with a Creative Commons (CC) license. 

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.

 

How to Cite

Shokry, F., Shaker, A. ., Elsaid, M., & Abouelatta, M. (2020). Design of Extended Channel Ge-source TFET for Low Power Applications. International Journal of Integrated Engineering, 12(8), 191-197. https://publisher.uthm.edu.my/ojs/index.php/ijie/article/view/5108