Modelling and Characterization of a 14 nm Planar p-Type MOSFET Device

  • Noor Faizah Z. A. Universiti Tenaga Nasional (UNITEN) 43009 Kajang, Selangor, Malaysia.
  • I. Ahmad Universiti Tenaga Nasional (UNITEN) 43009 Kajang, Selangor, Malaysia.
  • P.J. Ker Universiti Tenaga Nasional (UNITEN) 43009 Kajang, Selangor, Malaysia.
  • P.S. Menon Universiti Kebangsaan Malaysia (UKM) 43600 Bangi, Selangor, Malaysia.
Keywords: 14nm p-type transistor, high-k dielectrics, metal gate, HfO2, TiSi2, Silvaco TCAD Tools.

Abstract

Coined by Gordon E. Moore through its law, a proper scaling is enforced for optimum device performance. Since 2k millennium, technology of metal gate on high-k dielectric was introduced to reduce the impact of scaling ultimatum on a transistor. In this letter, a 14nm planar p-type MOSFET device is virtually fabricated using ATHENA module and characterized for its performance evaluation using ATLAS module where both can be found in Virtual Wafer Fabrication (VWF) of Silvaco TCAD Tools. This is the continuance research from our established 32nm device simulation using HfO2/TiSi2. The findings show that the optimal value of threshold voltage (VTH), drive current (ION) and leakage current (IOFF) are -0.231507V, 72.4534 μA/um and 6.58635 pA/um respectively. The performance results also present a good switching capability of the device since the ION/IOFF ratio value is ≈106. The results of this work demonstrate that this 14nm planar p-type device possesses a good performance which can workhorse to future design and optimization.

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Author Biographies

Noor Faizah Z. A., Universiti Tenaga Nasional (UNITEN) 43009 Kajang, Selangor, Malaysia.

Centre for Micro and Nano Engineering (CeMNE), 

I. Ahmad, Universiti Tenaga Nasional (UNITEN) 43009 Kajang, Selangor, Malaysia.
Centre for Micro and Nano Engineering (CeMNE),
P.J. Ker, Universiti Tenaga Nasional (UNITEN) 43009 Kajang, Selangor, Malaysia.
Centre for Micro and Nano Engineering (CeMNE),
P.S. Menon, Universiti Kebangsaan Malaysia (UKM) 43600 Bangi, Selangor, Malaysia.
Institute of Microengineering and Nanoelectronics (IMEN),
Published
09-10-2015
How to Cite
Z. A., N. F., Ahmad, I., Ker, P., & Menon, P. (2015). Modelling and Characterization of a 14 nm Planar p-Type MOSFET Device. International Journal of Integrated Engineering, 7(3). Retrieved from https://publisher.uthm.edu.my/ojs/index.php/ijie/article/view/1225
Section
Issue on Electrical and Electronic Engineering