R. Yahyazadeh and Z. . . Hashempour, “Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature”, jst, vol. 12, no. 1, pp. 15–28, Jun. 2020, Accessed: May 05, 2024. [Online]. Available: https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/5377