1.
Yahyazadeh R, Hashempour Z. Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature. jst [Internet]. 2020 Jun. 21 [cited 2022 Jul. 3];12(1):15-28. Available from: https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/5377