Yahyazadeh, Rajab, and Zahra Hashempour. “Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature”. Journal of Science and Technology 12, no. 1 (June 21, 2020): 15–28. Accessed July 1, 2022. https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/5377.