Yahyazadeh, R. and Hashempour, Z. . . (2020) “Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature”, Journal of Science and Technology, 12(1), pp. 15–28. Available at: https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/5377 (Accessed: 3 July 2022).