YAHYAZADEH, R.; HASHEMPOUR, Z. . . Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature. Journal of Science and Technology, [S. l.], v. 12, n. 1, p. 15–28, 2020. Disponível em: https://publisher.uthm.edu.my/ojs/index.php/JST/article/view/5377. Acesso em: 4 jul. 2022.